Abstract
In this work, we investigated an organic semiconductor based on zinc 8-hydroxyquinoline (ZnQ2) and tetracyanoquinodimethane (TCNQ), which can be used as a photoactive layer in organic devices. The semiconductor was optimized by applying density-functional theory (DFT) methods, and four hydrogen bridges were formed between ZnQ2 and TCNQ. Later, thin films of ZnQ2-TCNQ were successfully deposited. The films were structurally and morphologically characterized, and the optical characteristics of the photoactive layer were investigated using ultraviolet–visible spectroscopy and time-dependent density-functional theory (TDDFT) calculations. The comparison and analysis of the experimental and theoretical absorption spectra indicate that the optical bandgap of the photoactive layer is 2.4 eV. Additionally, a flexible photo device was manufactured with the active layer ZnQ2-TCNQ, and its electrical behavior was evaluated under dark and light conditions. The results show a significant change in the behavior of the device when radiation is eliminated; the layer is light sensitive. The electrical resistance in the flexible photo device is associated with the optical behavior of the materials that constitute the active layer.
