Optoelectronic Properties Improvement of pm-Si:H Films with Silane Flux Variation

Abstract
This work describes the effect of silane flux on pm-Si:H films deposited by pecvd, with 3.5 torr, 210 °C and silane flux between 16-40 sccm. The augment of the silane flux increase the deposition rate to 2.3 A/s. The crystalline fraction varies from 9% to 17%. Exodiffusion experiments were related to structural and optical properties to understand their growth by analysis of bonding environment. The hydrogen stability and its amount bonded in these films are enhanced as the flux decreases. The optical gap decrease from 1.76 to 1.7 eV with silane flux. These could improve the stability of photovoltaic devices.